Article

High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility ≫4400 cm2/V s using InP barrier layer

Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78758, USA
Applied Physics Letters (impact factor: 3.84). 06/2009; DOI:10.1063/1.3133360 pp.193502 - 193502-3
Source: IEEE Xplore

ABSTRACT We have investigated device performance for In 0.7 Ga 0.3 As and In 0.53 Ga 0.47 As metal-oxide-semiconductor transistors (MOSFETs) with and without InP barrier layer using atomic layer deposited Al 2 O 3 gate dielectric. InP barrier layer was found to provide higher transconductance for both In 0.7 Ga 0.3 As and In 0.53 Ga 0.47 As MOSFETs, especially for In 0.7 Ga 0.3 As . In 0.7 Ga 0.3 As MOSFETs with InP barrier layer show much higher transconductance and lower subthreshold swing than other MOSFETs studied. These In 0.7 Ga 0.3 As MOSFETs exhibit high drive current of 98 mA/mm (L=20 μ m ) , subthreshold swing of 106 mV/decade and maximum effective channel mobility of 4402 cm 2/ V   s .

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Keywords

atomic layer
 
device performance
 
higher transconductance
 
InP barrier layer
 
lower subthreshold swing
 
maximum effective channel mobility
 
subthreshold swing
 

Han Zhao