Conference Proceeding

Design of compact power divider using integrated passive device (IPD) technology

STATS ChipPAC, Ltd., Ichon
Proceedings - Electronic Components and Technology Conference 06/2009; DOI:10.1109/ECTC.2009.5074278 pp.1894 - 1899 In proceeding of: Electronic Components and Technology Conference, 2009. ECTC 2009. 59th
Source: IEEE Xplore

ABSTRACT An integrated passive device (IPD) technology has been developed to achieve lower cost, further miniaturization and higher performance radio frequency (RF) devices for wireless communication system applications. This paper describes a compact power divider suitable for wireless system application using integrated passive device (IPD) technology based on silicon substrate. The 2-way power divider of wire bond and flip chip type were realized by thin film IPD technology. Electromagnetic (EM) simulation was used to optimize individual inductor design to improve its quality factor. The fabricated IPD 2-way power divider has insertion loss of < 0.4 dB, return loss of >15 dB and isolation characteristic of > 20dB for 801.11a band (4900 MHz-5900 MHz) and their dimensions are 1.2 mm times 1.0 mm for wire bond version and 1.2 mm times 1.2 mm for flip chip version, respectively. These compact power dividers can be used for a variety of applications in RF and microwave areas.

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Keywords

2-way power divider
 
compact power divider suitable
 
compact power dividers
 
EM
 
fabricated IPD 2-way power divider
 
flip chip type
 
flip chip version
 
higher performance radio frequency
 
IPD
 
isolation characteristic
 
miniaturization
 
optimize individual inductor design
 
quality factor
 
return loss
 
thin film IPD technology
 
wire bond
 
wire bond version
 
wireless communication system applications
 
wireless system application