Article

Optimizing the Operation of Terahertz Silicon Lasers

German Aerosp. Center (DLR), Inst. of Planetary Res., Berlin
IEEE Journal of Selected Topics in Quantum Electronics (impact factor: 3.78). 07/2009; DOI:10.1109/JSTQE.2008.2011492 pp.925 - 932
Source: IEEE Xplore

ABSTRACT In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser efficiency has been investigated. It was found that an external uniaxial force applied to the laser crystal lowers the pump threshold and increases the output power.

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Keywords

absorption
 
external uniaxial force
 
laser efficiency
 
laser operation
 
operation temperature
 
output power
 
photoinduced free carriers
 
pump geometry
 
pump threshold
 
terahertz silicon lasers