Article

Electronic structure of a polymer nanowire on H-terminated Si(100)

Nanomaterials Laboratory, National Institute for Materials Science, Namiki, Tsukuba, Ibaraki 305-0044, Japan
Journal of Applied Physics (impact factor: 2.17). 07/2005; DOI:10.1063/1.1928326 pp.124302 - 124302-6
Source: IEEE Xplore

ABSTRACT We measured current–voltage (I–V) characteristics of individual conducting polymers, poly(3-hexylthiophene)s (P3HTs), fixed on hydrogen-terminated Si(100) using scanning tunneling microscopy (STM)/spectroscopy. The I–V curves reveal rectification characteristics that are attributed to the shift of the energy level of the valence-band maximum of P3HT under bias. The current suppression at positive substrate bias results from the effect of differential charging of the polymer between the opposite bias polarities, indicating the possibility for doping of polymer nanowires by using a STM tip as a gate electrode.

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Keywords

bias polarities
 
current suppression
 
current–voltage
 
gate electrode
 
I–V curves
 
polymer nanowires
 
polymers
 
positive substrate bias results
 
scanning tunneling microscopy
 
STM tip
 
STM)/spectroscopy
 
valence-band maximum
 

Yasuhiko Terada