Ballistic electron emission spectroscopy (BEES), a technique based on the scanning tunneling microscope (STM), was used to measure Schottky barrier heights of metals on cleaved n‐type GaP(110). The threshold voltages V 0 for current detection in the semiconductor were found to be uniform to within ±0.02 V over the sample surface for any given metal on GaP. A transport model for the current I c crossing the barrier, that includes both nonclassical transmission across the metal–semiconductor interface and electron scattering in the metal, yields I c ∝(V-V 0 )5/2 near threshold. The value of V 0 extracted from the data, which represents the Schottky barrier height, depends somewhat on the details of the transport model. Our best estimates of the Schottky barrier heights, within ±0.03 eV, are 1.07 (Mg), 1.11 (Ni), 1.14 (Bi), 1.25 (Cu), 1.31 (Ag), and 1.46 eV (Au).
[Show abstract][Hide abstract] ABSTRACT: Ballistic-electron-emission microscopy (BEEM) is used to demonstrate experimentally that the creation of electron-hole pairs near the metal/semiconductor (M/S) interface significantly affects the scattering of the ballistic electrons with energy greater than the semiconductor-substrate energy gap. In addition, we observe that the derivative BEEM spectrum of Au/Si(001) (n-type) is rich with features which may correspond to either M/S interface states or to states in the semiconductor band gap near the interface. We suggest that these interface scattering processes occur also for other M/S systems.
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