Article

Investigation of the indium-boron interaction in silicon

CNR-IMM, Stradale Primosole 50, I-95121 Catania, Italy
Journal of Applied Physics (impact factor: 2.17). 07/2006; DOI:10.1063/1.2201443 pp.113516 - 113516-4
Source: IEEE Xplore

ABSTRACT The interaction between indium and boron coimplanted in silicon has been investigated. In particular, the effects of the coimplantation on the diffusion and the electrical activation have been studied in comparison with the single B or In implanted samples. It is shown that, by means of coimplantation, it is possible to obtain p -type carrier concentration profiles with a concentration peak higher than the ones achievable by the single In doping, but with the further advantage of a shallower carrier distribution with respect to the single B implant. It is found that this is due to the formation of In–B complexes with an acceptor level deeper than the one related to substitutional B.

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Keywords

acceptor level deeper
 
boron coimplanted
 
coimplantation
 
concentration peak higher
 
implanted samples
 
indium
 
In–B complexes
 
ones achievable
 
p -type carrier concentration profiles
 
shallower carrier distribution
 
single B
 
single B implant
 
substitutional B
 

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