Article

Magnetic anisotropy and high coercivity of epitaxial Co-ferrite films prepared by pulsed laser deposition

Department of Materials Science and Engineering, National University of Singapore, Singapore 119620, Singapore and Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore
Journal of Applied Physics (impact factor: 2.17). 06/2007; DOI:10.1063/1.2709763
Source: IEEE Xplore

ABSTRACT Co Fe 2 O 4 films with different thicknesses (40–200 nm ) were prepared on sapphire using pulsed laser deposition at different substrate temperatures. The films on (0001) sapphire showed a (111) epitaxial structure even at a low deposition temperature of 150 ° C . The coercivity up to 8.8 kOe could be achieved in the 40 nm film on sapphire deposited at 550 ° C . By comparison, the 33 nm film on quartz possesses a nanocrystalline structure with the grain size below 20 nm as well as a strong (111) preferential texture. The highest coercivity (12.5 kOe ) up to now was obtained in the 33 nm Co-ferrite films. The study also revealed that high coercivity and large perpendicular anisotropy of these Co-ferrite thin films may be related to the textured structure and large residual strain.

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Keywords

33 nm Co-ferrite films
 
33 nm film
 
40 nm film
 
Co-ferrite thin films
 
films
 
grain size
 
large residual strain
 
pulsed laser deposition
 
quartz possesses
 
sapphire
 
textured structure