Article

Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization

Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
Applied Physics Letters (impact factor: 3.84). 07/1997; DOI:10.1063/1.118426 pp.3275 - 3277
Source: IEEE Xplore

ABSTRACT Dramatic enhancements of over 300× in the room temperature photoluminescence signal obtained from high purity GaAs epitaxial layers were recorded after a brief heat treatment in tertiarybutylphosphine vapor. Low temperature photoluminescence spectra indicate that, unlike other passivation techniques, the surface layer formed during this simple treatment does not induce any appreciable strain on the underlying epilayer. The increases in photoluminescence intensity are indicative of a reduction in surface recombination brought about by the formation of a very thin GaP layer that protects against surface oxidation. © 1997 American Institute of Physics.

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Keywords

appreciable strain
 
brief heat treatment
 
Dramatic enhancements
 
Low temperature photoluminescence spectra
 
purity GaAs epitaxial layers
 
room temperature photoluminescence signal
 
surface layer
 
surface oxidation
 
surface recombination
 
tertiarybutylphosphine vapor