Article

Photorefractive p‐i‐n diode quantum well operating at 1.55 μm

France Telecom CNET/LAB, Technopole Anticipa, 2 Avenue Pierre Marzin, 22307 Lannion Cedex, France
Applied Physics Letters (impact factor: 3.84). 07/1996; DOI:10.1063/1.116642
Source: IEEE Xplore

ABSTRACT We demonstrate the performance of a semiconductor photorefractive p‐i‐n diode operating at 1.55 μm in the longitudinal quantum‐confined Stark geometry. The device structure consists of a semi‐insulating InP–GaInAs(P) multiple quantum well, sandwiched between two trapping regions, and embedded in a p‐n junction. In this structure, the measured output diffraction efficiency reaches 0.6%. This value is close to the output diffraction efficiency value estimated from electroabsorption measurements. © 1996 American Institute of Physics.

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Keywords

longitudinal quantum‐confined Stark geometry
 
output diffraction efficiency value
 
p‐n junction
 
semiconductor photorefractive p‐i‐n diode
 
μm