Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition

Department of Physics, Kwangwoon University, 447‐1 Wolgye‐dong, Nowon‐ku, Seoul 139‐701, Korea
Applied Physics Letters (Impact Factor: 3.52). 09/1992; DOI: 10.1063/1.107681
Source: IEEE Xplore

ABSTRACT CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p‐InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.

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