Article

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1-xGex (0≦x≦1) on SiO2

Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan
Applied Physics Letters (impact factor: 3.84). 04/2003; DOI:10.1063/1.1564298
Source: IEEE Xplore

ABSTRACT Metal-induced low-temperature (≦550 °C) crystallization of amorphous-Si 1-x Ge x (0≦x≦1) on SiO 2 has been investigated. In the case of low Ge fraction (0≦x≦0.2), Ge-doping enhanced plane growth was observed. This achieved strain-free poly-Si 0.8 Ge 0.2 with large grains (18 μm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (0.4≦x≦0.6). By optimizing the growth conditions (x: 0.4, annealing: 450 °C, 20 h), very sharp needle-like crystal regions (width: 0.05 μm, length: 10 μm) were obtained. These polycrystalline SiGe films on SiO 2 should be used for the system-in-display, three-dimensional ultralarge scale integrated circuits, and novel one-dimensional wires. © 2003 American Institute of Physics.

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Keywords

dendrite growth
 
growth conditions
 
intermediate Ge fractions
 
large grains
 
low Ge fraction
 
Metal-induced low-temperature
 
novel one-dimensional wires
 
plane growth
 
polycrystalline SiGe films
 
sharp needle-like crystal regions
 
three-dimensional ultralarge scale
 
μm
 

Hiroshi Kanno