Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Abstract

The effects of nitridation and reoxidation on the off‐state leakage currents of n‐channel metal‐oxide‐semiconductor‐field‐effect transistors have been investigated. It is found that nitridation greatly increases the gate leakage in the low‐field range but ensuing reoxidation can effectively reduce it. Nitridation‐induced oxide traps could be responsible for this leakage, along with traps introduced during the source/drain implant. A trap‐assisted tunneling model has been proposed to explain this off‐state gate leakage.