Temperature Dependence of Semiconductor Band Gaps

University of Strathclyde, Glasgow, G4 ONG Scotland, United Kingdom
Applied Physics Letters (Impact Factor: 3.52). 07/1991; 58(25):2924 - 2926. DOI: 10.1063/1.104723
Source: IEEE Xplore

ABSTRACT The application of a simple three‐parameter fit to the temperature dependence of semiconductor band gaps is justified on both practical and theoretical grounds. In all trials the fit is numerically better than that obtained using the widely quoted Varshni equation. The formula is shown to be compatible with reasonable assumptions about the influence of phonons on the band‐gap energy. Approximate analytical expressions are derived for the entropy and enthalpy of formation of electron‐hole pairs in semiconductors.

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    Thin Solid Films 05/2015; 582. DOI:10.1016/j.tsf.2014.10.069 · 2.13 Impact Factor
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    • "For the orthorhombic structure of Cu 3 BiS 3 we use the notations X and Y for the top two bands. The temperature dependencies of E gX and E gY were fitted with the expression introduced by O'Donnell and Chen [20] "
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    • "In fact, the most oxide defects demonstrate such PL behavior in the 80 to 300 K range. In contrast, the PL band, related to exciton recombination in quantum confinement Si-ncs, has to demonstrate the shift of its peak position to higher-energy side (up to approximately 41 meV) due to Si bandgap increase [30,31] accompanied by the increase of PL intensity [32]. However, it is worth to note that the appearance of the strains as well as their sign (tensile or compressive) results either in the increase or in the decrease of this PL shift [33]. "
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