Article

Monte Carlo analysis of ionization threshold in Si

Applied Physics Letters (impact factor: 3.84). 03/1990; DOI:10.1063/1.102727 pp.653 - 655
Source: IEEE Xplore

ABSTRACT Monte Carlo simulations of electronic high‐field transport in Si are performed. Contrary to previous treatments of impact ionization, we do not employ the ordinary Keldysh formula [Sov. Phys. JETP 21, 1135 (1965)] with a soft threshold, but rather a new expression, which is an explicit function of the wave vector of the initiating electron, is used. The calculation results of drift velocity, ionization coefficient, and quantum yield show excellent agreement with the experimental data. Our results strongly substantiate the idea that the ionization threshold is basically hard even in Si in the sense that the electrons rapidly ionize when they approach the threshold energies and that the softness of the ionization threshold is introduced through the wave vector dependence of the threshold energies.

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Keywords

calculation results
 
electronic high‐field transport
 
excellent agreement
 
explicit function
 
impact ionization
 
ionization coefficient
 
ionization threshold
 
Monte Carlo simulations
 
new expression
 
ordinary Keldysh formula [Sov
 
previous treatments
 
Si
 
soft threshold
 
softness
 
wave vector
 
wave vector dependence
 

Nobuyuki Sano