Variation of the critical layer thickness with In content in strained InxGa1-xAs‐GaAs quantum wells grown by molecular beam epitaxy

Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
Applied Physics Letters (Impact Factor: 3.52). 10/1987; 51(10):752 - 754. DOI: 10.1063/1.98856
Source: IEEE Xplore

ABSTRACT The critical width L c for misfit dislocation generation has been determined for molecular beam epitaxy grown strained In x Ga 1 -x As (0.1≪x≤1) quantum wells in a GaAs matrix by means of photoluminescence measurements. For the full alloy region the dependence L c (x) is in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)].

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