Article

Vertical field‐effect transistors in III‐V semiconductors

California Institute of Technology, Pasadena, California 91125
Applied Physics Letters (impact factor: 3.84). 09/1984; DOI:10.1063/1.95204 pp.258 - 260
Source: IEEE Xplore

ABSTRACT Vertical metal‐semiconductor field‐effect transistors in GaAs/GaAlAs and vertical metal‐oxide‐semiconductor field‐effect transistors (MOSFET’s) in InP/GaInPAs materials have been fabricated. These structures make possible short channel devices with gate lengths defined by epitaxy rather than by submicron photolithography processes. Devices with transconductances as high as 280 mS/mm in GaAs and 60 mS/mm (with 100‐nm gate oxide) for the InP/GaInPAs MOSFET’s were observed.

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Keywords

GaAs
 
GaAs/GaAlAs
 
InP/GaInPAs materials
 
InP/GaInPAs MOSFET’s
 
MOSFET’s
 
possible short channel devices
 
submicron photolithography processes
 
Vertical metal‐semiconductor field‐effect transistors
 

Z. Rav-Noy