Article

Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy

Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173‐0073
Applied Physics Letters (impact factor: 3.84). 12/1984; DOI:10.1063/1.95033 pp.1107 - 1109
Source: IEEE Xplore

ABSTRACT Device‐quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal‐semiconductor field‐effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at V gs =-3 V for gate dimensions of 2.0 μm×200 μm.

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Keywords

leakage current
 
Metal‐semiconductor field‐effect transistors
 
molecular beam epitaxy
 

G.M. Metze