Device study, chemical doping, and logic circuits based on transferred aligned single-walled carbon nanotubes

Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
Applied Physics Letters (Impact Factor: 3.52). 08/2008; DOI: 10.1063/1.2956677
Source: IEEE Xplore

ABSTRACT In this paper, high-performance back-gated carbon nanotube field-effect transistors based on transferred aligned carbon nanotubes were fabricated and studies found that the on/off ratio can reach 107 and the current density can reach 1.6 μ A /μ m after electrical breakdown. In addition, chemical doping with hydrazine was used to convert the p -type aligned nanotube devices into n -type. These devices were further utilized to demonstrate various logic circuits, including p -type metal-oxide-semiconductor inverters, diode-loaded inverters, complementary metal-oxide-semiconductor inverters, NAND, and NOR gates. This approach could work as the platform for future nanotube-based nanoelectronics.

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