The effect of p doping in InAs quantum dot lasers
ABSTRACT We directly measure the modal gain and spontaneous emission spectra in three quantum dot structures that are nominally identical except for the level of p doping to ascertain the effect that p doping has on quantum dot lasers. The maximum modal gain increases at fixed quasi-Fermi level separation as the level of p doping increases from 0 to 15 to 50 acceptors per dot. The internal optical mode loss is similar for all three samples but the measured nonradiative current is larger for the p -doped structures.
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ABSTRACT: We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stabilityIEEE Photonics Technology Letters 10/2006; · 2.19 Impact Factor
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