Article

The effect of p doping in InAs quantum dot lasers

School of Physics and Astronomy, Cardiff University, 5, The Parade, Cardiff CF24 3YB, United Kingdom
Applied Physics Letters (impact factor: 3.84). 04/2006; DOI:10.1063/1.2186078 pp.111113 - 111113-3
Source: IEEE Xplore

ABSTRACT We directly measure the modal gain and spontaneous emission spectra in three quantum dot structures that are nominally identical except for the level of p doping to ascertain the effect that p doping has on quantum dot lasers. The maximum modal gain increases at fixed quasi-Fermi level separation as the level of p doping increases from 0 to 15 to 50 acceptors per dot. The internal optical mode loss is similar for all three samples but the measured nonradiative current is larger for the p -doped structures.

0 0
 · 
0 Bookmarks
 · 
21 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

50 acceptors
 
internal optical mode loss
 
maximum modal gain increases
 
measured nonradiative current
 
nominally identical
 
p -doped structures
 
quantum dot lasers
 
quantum dot structures
 
quasi-Fermi level separation
 
spontaneous emission spectra
 
three samples