Conference Paper

NEGF analysis of InGaAs Schottky barrier double gate MOSFETs

DOI: 10.1109/IEDM.2008.4796843 Conference: Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Source: IEEE Xplore

ABSTRACT A systematic study of InGaAs metallic source/drain Schottky barrier (SB) FET is conducted from a structural and material perspective by comparing it with InGaAs MOSFET and Si SBFET counterparts. The InGaAs SBFET exhibits a superior subthreshold swing compared to its Si counterpart due to its smaller transport mass. The contrary occurs at smaller channel length, demonstrating that InGaAs SBFETs are not as scalable. Since these devices exhibit different subthreshold and transconductance properties, their relative device advantage depends on the operating condition. We demonstrate that there is a window where the ION of an InGaAs SBFET can outperform its InGaAs MOSFET and Si SBFET counterparts.

Full-text

Available from: Tony Low, May 29, 2015
0 Followers
 · 
207 Views
  • [Show abstract] [Hide abstract]
    ABSTRACT: Thanks to the high electron velocities, III–V semiconductors have the potential to meet the challenging ITRS requirements for high performance for sub-22-nm technology nodes and at a supply voltage approaching 0.5 V. This paper presents a comparative simulation study of ultrathin-body InAs, ${rm In}_{0.53}{rm Ga}_{0.47}{rm As}$ , and strained Si MOSFETs, by using a comprehensive semiclassical multisubband Monte Carlo (MSMC) transport model. Our results show that: 1) due to the finite screening length in the source-drain regions, III–V and Si nanoscale MOSFETs with a given gate length $({L}_{{G}})$ may have a quite different effective channel length $({L}_{{rm eff}})$ ; 2) the difference in ${L}_{{rm eff}}$ provides a useful insight to interpret the performance comparison of III–V and Si MOSFETs; and 3) the engineering of the source-drain regions has a remarkable influence on the overall performance of nanoscale III–V MOSFETs.
    IEEE Transactions on Electron Devices 06/2014; 61(6):2027-2034. DOI:10.1109/TED.2014.2315919 · 2.36 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Abstract Staging of colorectal cancer constitutes an important part of its diagnosis and prognosis. However, both invasive and non-invasive techniques prevail with their own advantages and disadvantages. The present review focuses on the existence of complementarity between the information obtained from computerized tomography and radioimmunoscintigraphy in the study of hepatic and extra-hepatic lesions of significance and relevant to colorectal cancer. The latter technique utilizes different monoclonal antibodies which are tagged with radioisotopes and imaging done by gamma-camera. For complete diagnosis of recurrent carcinoma or metastases, knowledge form both the pre-surgical procedures is an absolute necessity to choose the correct therapeutic modality.
    Lecture Notes in Bioengineering-Advancements of Medical Electronics-Proceedings of the First International Conference , published by Springer India, 2015; 01/2015
  • [Show abstract] [Hide abstract]
    ABSTRACT: This paper explores band structure effect on the quantum transport of a low-dimensional GaSb Schottky MOSFET (SBFET) for the implementation of III–V transistor with a low series resistance. Precise treatment of the full band structure is employed applying sp 3d 5s ∗ tight-binding (TB) formalism. A remarkable distinction between the thickness dependent effective masses extracted from the TB and the bulk values imply that the quantum confinement modifies the device performance. Strong transverse confinement leads to the effective Schottky barrier height increment. Owing to the adequate enhanced Schottky barriers at low drain voltages, a double barrier gate modulated potential well is formed along the channel. The double barrier profile creates a longitudinal quantum confinement and induces drain current oscillation at low temperatures. Significant factors that may affect the current oscillation are thoroughly investigated. Current oscillation is gradually smoothed out as the gate length shrinks down in ultra scaled structure. The results in this paper are paving a way to clarify the feasibility of this device in nanoscale regime.
    Journal of Computational Electronics 06/2013; 13(2). DOI:10.1007/s10825-013-0544-x · 1.37 Impact Factor