New physical model for ultra-scaled 3D nitride-trapping non-volatile memories
ABSTRACT In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons with experimental data obtained on ultra-scaled devices with different aspect ratios and gate stacks. Scaling opportunities of such kind of 3D devices are deeply discussed.
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ABSTRACT: The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.Physical Review - PHYS REV X. 01/1952; 87(5):835-842.
Conference Proceeding: A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET[show abstract] [hide abstract]
ABSTRACT: Theoretical calculation indicates that when the fin width is comparable to the EOT of the ONO, the bottom oxide electric field around the fin tip is significantly increased, resulting in the enhanced program/erase efficiency. We also discover that the non-uniform injection along the fin changes DC characteristics (S.S. and g<sub>m</sub>) during program/erase, and the effective channel width of FinFET SONOS is only around the fin tip. We integrate BE-SONOS in a body-tied FinFET structure with a very small fin width (<20 nm), and demonstrate a high-speed NAND Flash (<20 musec programming time and <2 msec erasing time for a 5 V memory window). The present work provides not only physical insights into the operation mechanisms of FinFET SONOS-type devices, but also a new design method for high-speed NAND Flash.Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
Conference Proceeding: Advantages of the FinFET architecture in SONOS and Nanocrystal memory devices[show abstract] [hide abstract]
ABSTRACT: Double-gate and tri-gate FinFET type memories with nitride (SONOS-like) or Si nanocrystals storage with minimum feature sizes of 10 nm were realized. Strong performance advantages in program / erase characteristics and reliability deeply linked to the FinFET architecture are demonstrated.Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008