Conference Paper

New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.

DOI: 10.1109/IEDM.2008.4796750 Conference: Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Source: IEEE Xplore


In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons with experimental data obtained on ultra-scaled devices with different aspect ratios and gate stacks. Scaling opportunities of such kind of 3D devices are deeply discussed.

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