Article

Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
IEEE Electron Device Letters (impact factor: 2.85). 05/2009; DOI:10.1109/LED.2009.2014790 pp.328 - 330
Source: IEEE Xplore

ABSTRACT Deep-submicrometer AlGaN/GaN HEMTs with integrated slant field plates have been fabricated. Simulation showed this technology had the ability to minimize both the dc-RF dispersion and parasitic capacitance. Prototype device results demonstrated an excellent millimeter-wave power density of 4.9 W/mm with a power-added efficiency of 45% at 30 GHz at a drain bias of 30 V.

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Keywords

drain bias
 
excellent millimeter-wave power density
 
minimize
 
parasitic capacitance
 
power-added efficiency
 
Prototype device results
 
slant field plates
 

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