Conference Proceeding

Porous alumina based capacitive MEMS RH sensor

Dept. of Electron Devices, Budapest Univ. of Technol. & Econ., Budapest
05/2008; DOI:10.1109/DTIP.2008.4753024 pp.381 - 385 In proceeding of: Design, Test, Integration and Packaging of MEMS/MOEMS, 2008. MEMS/MOEMS 2008. Symposium on
Source: IEEE Xplore

ABSTRACT The aim of a joint research and development project at the BME and HWU is to produce a cheap, reliable, low-power and CMOS-MEMS process compatible capacitive type relative humidity (RH) sensor that can be incorporated into a state-of-the-art, wireless sensor network. In this paper we discuss the preparation of our new capacitive structure based on post-CMOS MEMS processes and the methods which were used to characterize the thin film porous alumina sensing layer. The average sensitivity is approx. 15 pFIRH% which is more than a magnitude higher than the values found in the literature. The sensor is equipped with integrated resistive heating, which can be used for maintenance to reduce drift, or for keeping the sensing layer at elevated temperature, as an alternative method for temperature-dependence cancellation.

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Keywords

alternative method
 
CMOS-MEMS process compatible capacitive type relative humidity
 
joint research
 
magnitude higher
 
new capacitive structure
 
reliable
 
resistive heating
 
sensing layer
 
temperature-dependence cancellation
 
thin film porous alumina
 
wireless sensor network