Conference Proceeding

A rigorous assessment of electro-thermal device instabilities via Harmonic Balance modeling

Dipt. di Elettron., Politec. di Torino, Turin
12/2008; DOI:10.1109/EUMC.2008.4751742 In proceeding of: Microwave Conference, 2008. EuMC 2008. 38th European
Source: IEEE Xplore

ABSTRACT This paper presents a rigorous numerical approach to the assessment of electro-thermal instabilities arising in high-power semiconductor devices operating under time-periodic conditions. The methodology is entirely developed in the frequency domain with reference to the Harmonic Balance technique, i.e. no time-domain calculations are required for the determination of the Floquet multipliers exploited for the stability analysis. As an example of application, the current gain collapse occurring in multifinger AlGaAs/GaAs HBTs is studied and compared to the customary stability criterion based on a purely static analysis.

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Keywords

current gain collapse
 
customary stability criterion
 
frequency domain
 
Harmonic Balance technique
 
high-power semiconductor devices
 
paper presents
 
stability analysis
 
static analysis
 
time-domain calculations