Conference Paper

On integration-based methods for MOSFET model parameter extraction

Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
DOI: 10.1109/ICSICT.2008.4734566 Conference: Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Source: IEEE Xplore

ABSTRACT This article reviews integration-based model-parameter extraction methods for MOSFETs. It comprises three different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two other methods are included for extraction under saturation conditions. An integration-based method to evaluate the location of a maximum value of a given function is also included. Finally, the possibility of evaluating distortion is briefly introduced.

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  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-ofthe-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations.

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