Conference Paper

On Integration-based Methods for MOSFET Model Parameter Extraction

Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
DOI: 10.1109/ICSICT.2008.4734566 Conference: Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Source: IEEE Xplore

ABSTRACT This article reviews integration-based model-parameter extraction methods for MOSFETs. It comprises three different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two other methods are included for extraction under saturation conditions. An integration-based method to evaluate the location of a maximum value of a given function is also included. Finally, the possibility of evaluating distortion is briefly introduced.

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Available from: Adelmo Ortiz-Conde, Apr 01, 2015
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