Conference Paper

On Integration-based Methods for MOSFET Model Parameter Extraction

Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
DOI: 10.1109/ICSICT.2008.4734566 Conference: Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Source: IEEE Xplore

ABSTRACT This article reviews integration-based model-parameter extraction methods for MOSFETs. It comprises three different methods that use the transfer characteristics measured under linear regime operation conditions. Additionally two other methods are included for extraction under saturation conditions. An integration-based method to evaluate the location of a maximum value of a given function is also included. Finally, the possibility of evaluating distortion is briefly introduced.

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Available from: Adelmo Ortiz-Conde, Aug 08, 2015
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    • "Finally, Section 4 reviews and discusses some non-crystalline device specific integration-based procedures [75] [86] [91], recently proposed to extract their threshold voltage. These integrationbased methods for parameter extraction in two-terminal devices were originally reviewed in 2008 in two articles [92] [93]. "
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    ABSTRACT: Presents an up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-of-the-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations.
    Microelectronics Reliability 09/2013; 53(1):90-104. DOI:10.1016/j.microrel.2012.09.015 · 1.43 Impact Factor
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    • "Finally, Section 4 reviews and discusses some non-crystalline device specific integration-based procedures [75] [86] [91], recently proposed to extract their threshold voltage. These integrationbased methods for parameter extraction in two-terminal devices were originally reviewed in 2008 in two articles [92] [93]. 2. Extraction from measured I D –V G characteristics "
    [Show abstract] [Hide abstract]
    ABSTRACT: Up-to-date review of the several extraction methods commonly used to determine the value of the threshold voltage of MOSFETs. It includes the different methods that extract this quantity from the drain current versus gate voltage transfer characteristics measured under linear operation conditions for crystalline and non-crystalline MOSFETs. The various methods presented for the linear region are adapted to the saturation region and tested as a function of drain voltage whenever possible. The implementation of the extraction methods is discussed and tested by applying them to real state-ofthe-art devices in order to compare their performance. The validity of the different methods with respect to the presence of parasitic series resistance is also evaluated using 2-D simulations.
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    • "The effectiveness of integration-based methods, such as those presented here, has been proven already in the extraction of other electron devices' model parameters [9] [10] [11]. In what follows we will show how such simple methods may be advantageously applied for calculating the sub-threshold slope factor of MOSFETs. "
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    ABSTRACT: We propose the use of simple integration-based methods to extract the sub-threshold current slope factor of MOSFETs as an alternative to traditional extraction processes based on differentiating the sub-threshold transfer characteristics. The purpose is to lessen the effects of error and noise often present in the measurement of very small currents, which are aggravated by the differentiation processes. The effectiveness of the proposed methods is compared to the traditional Transconductance-to-Current Ratio method using the measured transfer characteristics of two experimental devices as application examples.
    Microelectronics Reliability 02/2010; DOI:10.1016/j.microrel.2009.11.001 · 1.43 Impact Factor
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