High repetitive pulsed power modulator based on IGBT switches for PSII application
ABSTRACT In this paper, a novel new pulsed power generator based on IGBT stacks is proposed for pulsed power application which can be used for PSII applications. Because it can generate high voltage pulsed output without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shape.
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ABSTRACT: The treatment of metal and polymer materials by plasma ion implantation (PII) requires high‐voltage, high average‐power modulators to process relatively large‐size parts in a reasonable amount of time. CROSSATRON‐switch‐based modulators provide all of the features desired for large‐scale PII. The fast opening and closing capability of the switch eliminates the need for pulse‐forming networks and high‐voltage thyratrons, and allows arbitrary pulse width adjustment over the range of 2 to 100 μs of interest for PII. The CROSSATRON switch is capable of modulating high peak currents, which permits rapid charging of the relatively high capacitance of the PII load to provide fast switching times. The CROSSATRON switch requires only a low‐voltage (≤1 kV) pulsed biasing of the control grid to close and open, and has switching times of 1 μs or less. CROSSATRON switches are cold‐cathode, plasma discharge devices that also eliminate the need for large filament‐heater power supplies and higher grid‐drive power required for hard‐vacuum‐tube switches. A 100‐kV modulator, built at Hughes Research Laboratories for the PII program, has demonstrated reliable operation at up to 100 kW of average power, limited only by the existing power supply. The modulator is based on the 120‐kV, 8455H CROSSATRON switch, which provides hard‐tube‐like modulation at peak currents of up to 1000 A and pulse repetition frequencies (PRFs) of over 1 kHz.Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 04/1994; · 1.27 Impact Factor
Conference Proceeding: Thyratron modulators in plasma source ion implantation[show abstract] [hide abstract]
ABSTRACT: Plasma source ion implantation (PSII) is an emerging technology which can be used to harden metal surfaces in a conformal manner. North Star Research Corp. (NSRC) is building a unique implanter system for Empire Hard Chrome which will be the first truly commercial implanter of this type. The choice of pulsed power technology for this application is important from the standpoint of both reliability and compatibility with the basic plasma processes under consideration. In this paper, the authors evaluate the various possible pulsed power system choices including thyratron modulators, hard tube modulators and crossatron modulators in the context of compatibility with the plasma and implantation process. Currents in the hundreds of amperes at 80-100 kV are clearly found to be desirable based on the requirements of the process. This leads to the logical choice of thyratron/transformer modulators at lower average powers, or crossatron modulators at higher average powers. They also discuss pulse forming network design for thyratron modulators for the universal PSII-type waveform. A thyratron modulator was selected for the Empire implanter due to the requirements for low cost and high peak currentPulsed Power Conference, 1995. Digest of Technical Papers., Tenth IEEE International; 08/1995
Conference Proceeding: Semiconductor switches based pulse power generator for plasma source ion implantation[show abstract] [hide abstract]
ABSTRACT: Semiconductor switches based pulse power generator for plasma source ion implantation is proposed in this study. The pulse generator consists of six IGBT stacks and a step-up pulse transformer. To increase the current rating of the pulse generator, three six IGBT stacks are used in parallel and to increase voltage rating of the pulse generator, twelve IGBTs are used in the stack. Each IGBT stack composed of twelve IGBTs has only two active drivers and eleven passive drivers (are composed of passive components such as resistors, capacitors, and diodes). Two active drivers are located in the groundside, which ensures low insulation requirement for the controller. The proposed pulse generator can generate the pulse voltage with the following parameters: voltage - 10∼60 kV; rising time - 1 μs; pulse width - 2 ∼ 6 μs with 1 μs size; pulse repetition rate - 2000 pps. The proposed pulse power generator uses only semiconductor switches with only two active drivers. So this system structure gives a semiinfinite lifetime, compactness and high efficiency.Power Modulator Symposium, 2004 and 2004 High-Voltage Workshop. Conference Record of the Twenty-Sixth International; 06/2004