High Repetitive Pulsed Power Modulator Based on IGBT switches for PSII Application
KERI, Sungjudong 28-1, Changwon, South KoreaDOI: 10.1109/PPPS.2007.4652499 Conference: Pulsed Power Conference, 2007 16th IEEE International, Volume: 2
Source: IEEE Xplore
In this paper, a novel new pulsed power generator based on IGBT stacks is proposed for pulsed power application which can be used for PSII applications. Because it can generate high voltage pulsed output without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shape. Proposed scheme consists of multiple power stages which generate maximum 6.8kV, 300A output pulse and one series resonant power inverter to charge DC capacitor voltage. Depending on the number of power stages it can increase maximum voltage up to 60kV without any restriction. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.
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ABSTRACT: Power insulated gate bipolar transistors (IGBTs) are frequently used in pulsed power applications. While published data is readily available for most IGBTs under steady-state conditions, little information is known for a given IGBT regarding pulsed power conditions. This paper presents a characterization process of power IGBTs for creating IGBT SPICE models. Each IGBT will be subjected to single 5 mus pulses at 4.5 kV and 1 kA. During the pulse, characteristics such as rise time, fall time, maximum collector current, and maximum collector-emitter voltage will be measured. Additionally, the effects of the gate drive with respect to the collector-emitter characteristics will be observed. This process will be demonstrated with the IXYS IXEL40N400 and the Powerex QIS4506001 IGBTs to allow for circuit simulations with these models as circuit elements.IEEE International Power Modulators and High Voltage Conference, Proceedings of the 2008; 07/2008
Conference Paper: Characterization of power IGBTS under pulsed power conditions[Show abstract] [Hide abstract]
ABSTRACT: The power insulated gate bipolar transistor (IGBT) is used in many types of applications. Although the use of the power IGBT has been well characterized for many continuous operation power electronics applications, little published information is available regarding the performance of a given IGBT under pulsed power conditions. Additionally, component libraries in circuit simulation software packages have a finite number of IGBTs. This paper presents a process for characterizing the performance of a given power IGBT under pulsed power conditions. Specifically, signals up to 4.5 kV and 1 kA with approximately a 5 Â¿s pulse width will be applied to a given IGBT. This process utilizes curve fitting techniques with collected data to determine values for a set of modeling parameters. These parameters are used in the Oziemkiewicz implementation of the Hefner model for the IGBT that is utilized in some circuit simulation software packages. After the nominal parameter values are determined, they can be inserted into the Oziemkiewicz implementation to simulate a given IGBT.Pulsed Power Conference, 2009. PPC '09. IEEE; 01/2009
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ABSTRACT: Modern pulsed power technology has its roots in the late 1950s and early 1960s, and it was driven overwhelmingly by applications in national defense carried out by several coun- tries, especially the U.S., U.K., Russia, and China. The following decades, particularly the early 1990s, witnessed an increased in- terest in compact systems with pulse repetition rate that could be used in nondefense applications such as treatment of material surfaces by plasma and beam interactions, treatment of pollutants, food sterilization, medical applications, etc. This spawned a new generation of pulsed power components (solid-state switches) that led to completely solid-state modulators. This paper describes how the pulsed power technology used originally in beam sources and cathodic arcs has converged to produce power sources for plasma-based ion implantation (PBII) and related technologies. The present state of the art is reviewed, and prospects for future advances are described, especially for PBII.IEEE Transactions on Plasma Science 11/2011; 39(11):3033-3044. DOI:10.1109/TPS.2011.2157841 · 1.10 Impact Factor
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