Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes
Dept. of Phys., Univ. of Alabama at Birmingham, Birmingham, ALConference: Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Source: IEEE Xplore
First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27 nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm2 laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.