Conference Proceeding

Investigation of nanowire size dependency on TSNWFET

Samsung Electron. Co., Yongin-City,
01/2008; DOI:10.1109/IEDM.2007.4419093 pp.891 - 894 In proceeding of: Electron Devices Meeting, 2007. IEDM 2007. IEEE International
Source: IEEE Xplore

ABSTRACT Nanowire size (dNW) dependency of various electrical characteristics on gate all around twin silicon nanowire MOSFET (TSNWFET) is investigated to understand overall performance of nanowire transistor deeply. When dNW decreases, current drivability (Ion) normalized by circumference at the same VG-VTH improves and maximizes at dNW of 4 nm. And mobility is also estimated with capacitance and series resistance. All the experimental investigation shows that dNW of 4 nm is the best point to maximize the volume inversion effect on gate all around nanowire MOSFET.

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Keywords

capacitance
 
current drivability
 
experimental investigation
 
Ion
 
maximizes
 
nanowire MOSFET
 
Nanowire size
 
nanowire transistor
 
twin silicon nanowire MOSFET
 
VG-VTH
 
volume inversion effect
 

Sung Dae Suk