Conference Paper

IGBT Stacks Based Pulse Power Generator for PIII&D

Korea Electrotechnol. Res. Inst., Changwon
DOI: 10.1109/PPC.2005.300503 Conference: Pulsed Power Conference, 2005 IEEE
Source: IEEE Xplore

ABSTRACT Plasma source ion implantation and deposition (PSII&D) is an emerging technology for surface treatment of metal and polymer materials. Through this technology it is possible to improve surface properties of the materials such as metals, plastics and ceramics. In this study, IGBT stacks based pulse power generator for PSII&D is proposed. The pulse generator uses six IGBT stacks and a step-up pulse transformer to generate high voltage pulse. Twelve IGBTs are connected in series in each IGBT to increase voltage rating of the pulse generator. Each IGBT stack uses a very simple driving method that has only two active drivers and eleven passive drivers (are composed of passive components such as resistors, capacitors, and diodes). Fault detection and fast protection are critical parts of the pulse power generator. The arc generation in the plasma load is common. Due to the arc in the plasma load, short current (overcurrent) condition is often generated. So the overcurrent detection and fast protection is implemented to protect pulse power generator in this paper.

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