Conference Paper

A 31 GHz fmax lateral BJT on SOI using self-aligned external base formation technology

Toshiba Corporation, Edo, Tōkyō, Japan
DOI: 10.1109/IEDM.1998.746512 Conference: Electron Devices Meeting, 1998. IEDM '98 Technical Digest., International
Source: IEEE Xplore

ABSTRACT A novel device structure and simple process technology for
realizing low-power/high-performance SOI lateral BJTs are presented. Low
base resistance has been achieved by employing a self-aligned external
base formation process. Due to reduced parasitics, the fabricated device
exhibited an fmax of 31 GHz, the highest value for an SOI BJT
reported so far