Conference Paper

1.3-μm wavelength InP laterally coupled distributed feedback ridge laser

Devices & Mater. Dept., Pioneer Electron. Corp., Saitama
DOI: 10.1109/OFC.1997.719852 Conference: Optical Fiber Communication. OFC 97., Conference on
Source: IEEE Xplore

ABSTRACT In this paper, the fabrication and characterization of 1.3-μm
wavelength GaInAsP-InP laterally coupled DFB ridge laser are presented
for the first time, to our knowledge. One-step MOCVD (metal organic
chemical vapor deposition) has been used for the epitaxial growth of the
laser structure with a separate confinement heterostructure bulk active
layer

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