Conference Proceeding

Full copper wiring in a sub-0.25 μm CMOS ULSI technology

Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International 01/1998; DOI:10.1109/IEDM.1997.650496 In proceeding of: Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Source: IEEE Xplore

ABSTRACT We present the first fully integrated ULSI CMOS/copper
interconnect technology. Up to 6 Cu wiring levels are built at minimum
metal-contacted pitch of 0.63 μm, with W local-interconnect and
contact levels and a polycontacted pitch of 0.81 μm, on a
fully-scaled sub 0.25 μm, 1.8 V CMOS technology. The Cu wiring has
advantages of significantly lower resistance, higher allowed current
density, and increased scalability, relative to comparable Ti/Al(Cu)
wiring. These benefits in turn have enabled the scaling of pitch and
thickness, from reduced-capacitance, high-density lower levels to low RC
global wiring levels, consistent with high-performance and high-density
needs. The integrated Cu hardware was evaluated according to a
comprehensive set of yield, reliability, and stress tests. This included
fully functional, high-density 288 K SRAM chips which were packaged into
product modules and successfully tested for reliability. Overall, we
find the results for full Cu wiring meet or exceed the standards set by
our Al(Cu)/W-stud technology

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