Conference Proceeding

High-power 1.5-μm InGaAsP/InP lasers with tapered-gain-region

Lincoln Lab., MIT, Lexington, MA
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 12/1997; DOI:10.1109/LEOS.1997.645490 pp.405 - 406 vol.2 In proceeding of: Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE, Volume: 2
Source: IEEE Xplore

ABSTRACT Semiconductor lasers and amplifiers with tapered gain regions are
well suited for applications requiring high output powers and good
spatial mode quality. Operation these large-area devices requires
epitaxial material with excellent uniformity. GaAs-based devices have
been well demonstrated and we have recently reported InGaAsP/InP tapered
lasers and amplifiers that operate at λ=1.3 μm. In this paper,
the development of 1.5-μm InGaAsP/InP quantum well material suitable
for this type of device is discussed and initial results on high power
tapered lasers with near-diffraction limited beam widths fabricated in
this material are presented

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Keywords

1.5-μm InGaAsP/InP quantum
 
amplifiers
 
epitaxial material
 
excellent uniformity
 
initial results
 
large-area devices
 
near-diffraction limited beam widths fabricated
 
Semiconductor lasers
 
suited
 

J.P. Donnelly