A tunable EBG absorber for radiofrequency power imaging
ABSTRACT Absorption characteristics of a tunable electromagnetic bandgap (EBG) absorber are analyzed, which is designed to capture 2d radiofrequency (RF) power distributions incident on the absorber surface. The EBG absorber has lumped resistors interconnecting the mushroomtype surface patches to absorb the incident RF power at the resonance frequency where the EBG structure exhibits a highimpedance feature. The absorbed RF power distribution is measured by directly detecting the amounts of RF power consumed by the individual resistors. Varactor diodes are inserted in parallel with the resistors for tuning the resonance frequency of narrowband absorption. The absorption characteristics at normal incidence are evaluated in detail based on an equivalent circuit model which exactly explains the frequency behavior of the surface impedance of the tunable EBG absorber observed in EM simulation. The small resistance existing in the varactor diode makes it difficult for the surface impedance to be matched with the incident wave impedance (i.e., for a high absorption to be achieved) over a wide range of resonance frequency. A means to improve the absorption performance of the tunable EBG absorber is examined.

Conference Paper: Radiofrequency field measurement using thin artificial magnetic conductor absorber
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ABSTRACT: The thin radiofrequency (RF) absorber constructed with an artificial magnetic conductor (AMC) surface is used as a sensor array to measure incident 2d RF field (amplitude and phase) distributions. The AMC surface employs a 2d dense array of mushroomtype square metal patches on a dielectric substrate. Incident waves are absorbed by the lumped resistors interconnecting the metal patches on the surface, when they are matched with the incident wave impedance at the resonance frequency of the mushroom structure. A 2d distribution of the amplitude and phase of the incident RF field is obtained by directly measuring those of the voltages induced on the individual resistors. The validity of this new technique of RF field measurement is evaluated using electromagnetic simulation. It is confirmed that the voltage induced on the resistor can be used to monitor the incident (absorbed) RF electric field. For a finitesized absorber the measurement accuracy is degraded near the outer edge due to edge reflections. This technique is expected to be useful for capturing the snapshots of RF field distributions in situ, while the electromagnetic environment is almost undisturbed by the AMC absorber.Electromagnetic Theory (EMTS), Proceedings of 2013 URSI International Symposium on; 01/2013
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9781424451180/11/$26.00 ©2011 IEEE
A Tunable EBG Absorber for RadioFrequency Power Imaging
Satoshi Yagitani1, Keigo Katsuda1, Ryo Tanaka1, Masayuki Nojima1,
Yoshiyuki Yoshimura2, and Hirokazu Sugiura2
1Graduate School of Natural Science and Technology, Kanazawa University,
Kakumamachi, Kanazawa 9201192, Japan
Email: yagitani@reg.is.t.kanazawau.ac.jp
2Industrial Research Institute of Ishikawa, 21 Kuratsuki, Kanazawa 9208203, Japan
Abstract
designed to capture 2d radiofrequency (RF) power distributions incident on the absorber surface. The EBG absorber
has lumped resistors interconnecting the mushroomtype surface patches to absorb the incident RF power at the
resonance frequency where the EBG structure exhibits a highimpedance feature. The absorbed RF power distribution
is measured by directly detecting the amounts of RF power consumed by the individual resistors. Varactor diodes are
inserted in parallel with the resistors for tuning the resonance frequency of narrowband absorption. The absorption
characteristics at normal incidence are evaluated in detail based on an equivalent circuit model which exactly explains
the frequency behavior of the surface impedance of the tunable EBG absorber observed in EM simulation. The small
resistance existing in the varactor diode makes it difficult for the surface impedance to be matched with the incident
wave impedance (i.e., for a high absorption to be achieved) over a wide range of resonance frequency. A means to
improve the absorption performance of the tunable EBG absorber is examined.
1. Introduction
A variety of thin electromagnetic absorbers have been designed based on the artificial highimpedance surfaces
such as frequencyselective surfaces and metamaterial surfaces (e.g., [1] and references therein). At the resonance
frequency where these surfaces exhibit the highimpedance feature, an incident wave is absorbed by the additional
resistive components which are matched with the incident wave impedance. Recently it was proposed that a thin
absorber can be used for monitoring 2d radiofrequency (RF) power distributions incident on the absorber surface [2].
A mushroomtype electromagnetic bandgap (EBG) structure is used as the highimpedance surface, where the
absorption is achieved by “lumped resistors” connecting between the adjacent patches on the mushroom layer [3]. With
this configuration the power of an RF wave incident on the mushroom surface is absorbed (or consumed) by the lumped
resistors. By directly measuring the power consumption in each of the lumped resistors arranged in a 2d matrix, the 2
d distribution of the RF power incident and absorbed on the mushroom surface is obtained. Such an “RF power
imager” has inherently a narrowband feature around the resonance frequency fixed by the geometrical and
constitutional structure of the EBG surface. To extend the measurable frequency range, the resonance frequency is
made electronically tunable by additional varactor diodes (varactors), as in [45]. A 347mm square EBG absorber was
designed and fabricated to cover the absorbing frequency range from 700 MHz up to 2.7 GHz. Power distributions
were detected at 8 × 8 locations on the absorber, at each of which two RF power detectors with the sensitivity of 70
dBm were placed to measure two orthogonal polarizations. The measured power distributions were transferred to a PC
and displayed as realtime 2d power images at a rate of 30 images/second. The RF power distributions radiated from a
dipole antenna were measured to be consistent with those expected theoretically, which validated the proposed
technique to measure the RF power distributions. Using such an RF power imager, the power distributions of even
impulsive RF signals and/or noises can be captured and visualized in situ and in realtime, while the electromagnetic
environment is almost undisturbed by the EBG absorber.
In the present study, the absorption characteristics of the tunable EBG absorber designed for RF power
imaging is evaluated in detail based on equivalent circuit analysis and EM simulation.
2. A Tunable EBG Absorber for Detecting RF Power Distribution
Figure 1 shows the geometrical structure of a square unit cell of the tunable EBG absorber designed for RF
Absorption characteristics of a tunable electromagnetic bandgap (EBG) absorber are analyzed, which is
Page 2
power imaging, which has lumped resistors and varactors inserted between the adjacent patches on the surface [2]. The
gap g between the adjacent patches is much smaller than the patch size w, and the periodicity of the unit cells, a = w + g,
is set much smaller than the wavelength. For an electromagnetic wave at normal incidence, the surface impedance of
the mushroom structure itself is represented as a parallel connection of the effective inductance and capacitance. The
highimpedance feature is achieved at the LC resonance frequency, where the mushroom layer behaves like an artificial
magnetic conductor. The incident wave power is absorbed by the lumped resistors interconnecting the surface patches;
if we take the value of the resistors as R = 377 Ω matched with the incident wave impedance, the incident wave should
be completely absorbed at the resonance frequency [3]. On the other hand, tunability is achieved by the varactors
inserted in parallel with the resistors, by altering the capacitance component of the EBG structure which specifies the
resonance frequency. As in the same manner designed by [6], the varactors are oriented in opposite directions in each
alternate row as well as in each alternate column of the matrix of mushrooms. Reverse biases are supplied to all the
varactors by alternately biasing half of the cells, and grounding the other half in a checkerboard pattern (see Fig. 3 of
[6]). A separate biasing circuit is placed on the backside of the ground plane. Thus, by applying appropriate bias
voltages to the varactors, we can control the frequency of RF power absorption. The locations of the varactor and the
resistor, as well as their separation distance d, on each side of a patch has an effect on the surface impedance, as
discussed in Sec. 3.
Varactordiode
Via
wg
Resistor (R)
d
x
y
R
CS
LS
CDLDRD
M
LV’
LR’R
CS
LS
CDLDRD
LV
LR
η0= 377 Ω
(a)(b)
k
ZZ
η0= 377 Ω
Fig. 1: Structure of a unit cell of the EBG absorber Fig. 2: Equivalent circuit model
On the EBG absorber in Fig. 1, the incident wave power is absorbed and dissipated in the surface resistors,
when there are no losses in the varactors and in the substrate. The amount of power absorbed by each resistor depends
on the incident polarization; the resistors connecting the adjacent patches in the x and ydirections absorb the amounts
of RF power with the electric field polarized in the x and ydirections, respectively [2]. In either case, the power
absorbed by each resistor is considered to be the Poynting flux of the incident wave multiplied by the area of a unit cell.
By detecting directly the amounts of power consumed in the 2d matrix of surface resistors, the 2d power distribution
of the RF wave illuminating the EBG surface is measured with polarization discrimination. Power detectors are put on
the backside of the EBG absorber, to detect the amounts of power consumed by the individual surface resistors [2].
3. Equivalent Circuit Analysis
Here the characteristics of the tunable EBG absorber shown in Fig. 1 are evaluated. The geometrical and
constitutional parameters are similar to those of the EBG absorber designed in [2], which had 33 × 33 square unit cells
formed on an FR4 substrate of 347 mm square and 1.6 mm thick. The size of a patch is w = 10 mm and the gap
between the adjacent patches is g = 0.5 mm, so that the cell periodicity is a = 10.5 mm. The via diameter is 0.6 mm.
The relative permittivity of the FR4 substrate is taken as 4.56 with no loss (tanδ = 0). The varactor is modeled as a
series RLC circuit; the series resistance RD = 1 Ω, the parasitic inductance LD = 1.8 nH and the capacitance CD is
variable from 0.67 to 12 pF (which makes the abosorber tunable from 700 MHz to 2.7 GHz). It is noted that the resistor
was chosen here as R = 845 Ω instead of 377 Ω, to have maximum absorption at 2 GHz (see the discussion in the next
paragraph). Using these parameters, the absorption characteristics of the EBG absorber were computed by an EM
simulator (CST Microwave Studio). A linearly polarized plane wave was incident normally on the EBG surface. A
square area containing four unit cells of the absorber was modeled by defining the periodic boundary condition, which
corresponds to simulating infinitely extending periodic unit cells.
Page 3
shown in Fig.2 (a). The effective capacitance and inductance of the mushroom structure are CS = 0.628 pF and LS =
1.86 nH, respectively. The effects of the surface currents on a patch flowing toward the varactor (CD , LD and RD) and
the resistor (R) are represented by a transformer, LV and LR coupled with the coefficient k, which are dependent of the
geometrical configuration of the varactor and the resistor on each side of the patch (i.e., their locations as well as their
separation distance d). The parameters of the transformer can be replaced with LV’, LR’ and their mutual inductance M
as in Fig. 2 (b); for the case of d = 1 mm, LV’ = 0.371 nH, LR’ = 0.41 nH and M = 0.235 nH. From this circuit, two
resonance frequencies are derived by solving Eq. (1) for ω .
111
10
ω
ω ωωωω
The surface impedance Z of the EBG absorber becomes purely resistive RP at each resonance frequency, and the
reflection coefficient is given as Γ = (RP −η0) / (RP +η0), where η0 = 377 Ω is the incident wave impedance. When the
capacitance of the varactor CD is varied, the resonance frequencies are changed accordingly. The value of the resistance
RP at the resonance frequency ω r is calculated as
=−
+−
where // means the parallel connection of the impedance. The typical frequency variation of the surface impedance
under the circuit parameters mentioned above is shown in Fig. 3. The absolute value of surface impedance Z is shown
by the solid line for the case of CD = 1.35 pF. In this case the first and second resonance frequencies appear at 2.0 GHz
and 6.7 GHz, respectively, which are observed as the two peaks on Z. When CD is varied from 12 pF down to 0.67 pF,
the first resonance frequency is changed from 700 MHz up to 2.7 GHz, whereas the second one is from 6.23 GHz up to
6.85 GHz. Over each resonance frequency range, the value of the resistance moves on the broken curve specified by Eq.
(2). From the viewpoint of achieving frequency tunability, the first resonance should be taken, as the variable range of
the second resonance frequency is unpractically narrow. To achieve a high absorption at each resonance frequency, the
resistance should be as close as possible to the incident wave impedance, η0 = 377 Ω (the dotted line). From Eq. (2), RP
becomes equal to R at ω r = ω S , and RP ~ (ZS
becomes smaller as the resonance frequency becomes lower. Thus the existence of the small resistance RD in the
varactor has a considerable effect on the frequency behavior of the surface impedance [4]. Here ω S /2π = 4.66 GHz and
ZS
becomes larger and smaller than 377 Ω, respectively, leading to impedance mismatch in either case.
The equivalent circuit which exactly reproduces the absorption characteristics obtained in the simulation is
4
2
2
S
2
D
2
S
2
D
2
C
ω
−+++ =
, where
1/2
−
1/2
−
1/2
−
(),(),()
SSSDDVDCSD
L CLL M CL C
ωωω
′
==++=
. (1)
()
2
2
2
S
2
r
2
S
1
/
//
11/
S
r
P
DSr
S
Z
R
RR
M L
ω
ω
ω
ω
ωω
−
, where
1/2
)(/
SSS
ZLC
=
, (2)
2
/RD) (ω r /ω S)2 // [R / (1+M /LS)2] for ω r << ω S ; the surface resistance
2
/RD = 2.96 kΩ, and R was chosen as 845 Ω so that RP becomes 377 Ω at 2.0 GHz. Above and below 2.0 GHz, RP
1
10
100
1000
Z0
10000
0.11 10
Impedance Z [Ω]
Frequency [GHz]
RP(adjusted)
RP
Z
(CD= 1.35 pF)
1st resonance
2nd resonance
η0
50
40
30
20
10
0
10
0.511.5
Frequency [GHz]
22.53
S11Magnitude [dB]
simulation
eq. circuit
CD= 5.81 pF
2.51 pF
1.35 pF
0.81 pF
Fig. 3: Surface impedance of the EBG absorber Fig. 4: Reflection magnitude of the EBG absorber
analysis and the simulation, which are plotted by gray and dotted lines, respectively. In each case four representative
profiles are plotted for the varactor capacitances fixed as CD = 5.81 pF, 2.51 pF, 1.35 pF and 0.81 pF, which correspond
to the resonance frequencies of 1.0 GHz, 1.5 GHz, 2.0 GHz and 2.5 GHz, respectively. For each of the capacitance
values, the reflection profile calculated by the equivalent circuit analysis agrees well to that observed in the simulation,
Figure 4 shows the reflection magnitude profiles for the first resonance obtained by the equivalent circuit
Page 4
which validates the accuracy of the equivalent circuit in Fig. 2. Also for the second resonance, though not shown here,
a good agreement was observed between the reflection profiles obtained by the equivalent circuit analysis and in the
simulation. On each curve, the reflection becomes minimum (the absorption becomes maximum) at the resonance
frequency determined by the value of CD. As discussed above, the amount of absorption becomes highest (S11 ~ −45
dB) at the resonance frequency of 2.0 GHz for the case of CD = 1.35 pF, where the surface impedance of the EBG
absorber RS becomes 377 Ω. When the resonance frequency goes above or below 2.0 GHz, the maximum absorption is
degraded due to the increase in mismatch between RS and 377 Ω.
As discussed above, Eq. (2) is approximated as RP ~ (ZS
frequencies ω r << ω S . If the three conditions, (ZS
Ω so that a high absorption would be achieved over a certain range of resonance frequency. Since the first condition is
rewritten as ω r
The other is to increase the effective inductance LS by increasing the thickness of the substrate. The gray line in Fig. 3
shows the surface resistance profile expected for the case of RD = 0.5 Ω, R = 377 Ω, LS = 3.72 nH (corresponding to the
substrate thickness of 3.2 mm) and M = 0 nH (which is achievable by adjusting the distance d between the resistor and
the varactor). In this case RP ~ 377 Ω is achieved over a wide range of resonance frequency above 1 GHz.
4. Conclusion
Absorption characteristics of the tunable EBG absorber used for imaging the RF power distributions were
evaluated by the equivalent circuit analysis and the simulation. A realistic equivalent circuit model was derived which
exactly explains the frequency behavior of the surface impedance of the EBG absorber for normal incidence observed in
the simulation. It was shown that the small resistance existing in the varactor diode makes it difficult for the surface
impedance to be matched with the incident wave impedance over a wide range of resonance frequency. A means to
improve the absorption performance of the tunable EBG absorber was examined. Evaluation for oblique incidence will
be the future work.
Acknowledgments
The authors would like to thank Dr. M. Ozaki for his valuable suggestions and discussions. This study was
supported by KAKENHI (21560444).
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2
/RD) (ω r /ω S)2 // [R / (1+M /LS)2] at first resonance
/RD) (ω r /ω S)2 >> R, R = 377 Ω and M << LS , are satisfied, RP ~ 377
2
2 LS
2 / RD >> R, one way to make it so is to use the varactor with the resistance RD as small as possible.