Article

Excellent Selector Characteristics of Nanoscale for High-Density Bipolar ReRAM Applications

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
IEEE Electron Device Letters (impact factor: 2.85). 12/2011; DOI:10.1109/LED.2011.2163697
Source: IEEE Xplore

ABSTRACT We herein present a nanoscale vanadium oxide (VO2) device with excellent selector characteristics such as a high on/off ratio (>; 50), fast switching speed (<; 20 ns), and high current density (>; 106 A/cm2). Owing to extrinsic defects, a large-area device with a 20-nm-thick VO2 layer underwent an electrical short. In contrast, after scaling the device active area (<; 5 × 104 nm2), excellent switching uniformity was obtained. This can be explained by the reduced defects and the metal-insulator transition of the whole nanoscale VO2. By integrating a bipolar resistive random access memory device with the VO2 selection device, a significantly improved readout margin was obtained. The VO2 selection device shows good potential for cross-point bipolar resistive memory applications.

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Keywords

bipolar resistive random access memory device
 
cross-point bipolar resistive memory applications
 
device active area
 
excellent selector characteristics
 
excellent switching uniformity
 
fast switching speed
 
good potential
 
integrating
 
large-area device
 
metal-insulator transition
 
on/off ratio
 
VO<sub>2</sub> selection device
 
whole nanoscale VO<sub>2</sub>