Article

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

IEEE Transactions on Electron Devices (impact factor: 2.32). 09/2011; DOI:10.1109/TED.2011.2138142 pp.2249 - 2256
Source: IEEE Xplore

ABSTRACT Noise margin, characteristics of six individual cell transistors, and their variability in static random-access memory (SRAM) cells are directly measured using a special device-matrix-array test element group of 16-kb SRAM cells, and the correlation between the SRAM noise margin and the cell transistor variability is analyzed. It is found that each cell shows a very different supply voltage V dd dependence of the static noise margin (SNM), and this scattered V dd dependence of the SNM is not explained by the measured threshold voltage V th variability alone, indicating that the circuit simulation taking only the V th variability into account will not predict the SRAM stability precisely at low supply voltage.

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Keywords

16-kb SRAM cells
 
<sub>dd</sub> dependence
 
cell transistor variability
 
characteristics
 
circuit simulation
 
different supply voltage
 
individual cell transistors
 
low supply voltage
 
measured threshold voltage
 
special device-matrix-array test element group
 
SRAM stability
 

T. Hiramoto