A Photonic Interconnect Layer on CMOS
ABSTRACT We propose and demonstrate a photonic interconnect layer consisting of heterogeneous microdisk lasers and microdetectors integrated with a nanophotonic silicon waveguide circuit. The photonic layer is fabricated using waferscale processes and a die-to-wafer molecular bonding process.
Full-textDOI: · Available from: Pedro Rojo-Romeo, Jul 16, 2015
- SourceAvailable from: P.J. van Veldhoven
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- "The detector structure is built as an InGaAs absorption layer sandwiched between a highly p-doped InGaAs contact layer and a highly n-doped InP layer, which is also used for realizing the membrane waveguide, and has a footprint of 5 × 10 µm 2 . We chose a total detector thickness of 1 µm in order to ease integration with the µ-disk lasers described in  "
ABSTRACT: We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the; 12/2008
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ABSTRACT: A cost-effective route to build electrically as well as optically controlled modulators in silicon photonics is reviewed. The technology enables modulation at bit rates beyond 100 Gbit/s. This platform relies on the well-established silicon-based complementary metal-oxide-semiconductor processing technology for fabricating silicon-on-insulator (SOI) waveguides, while an organic cladding layer adds the required nonlinearity. The strength of this hybrid technology is discussed, and two key devices in communications are exemplarily regarded in more detail. The first device demon- strates demultiplexing of a 120 Gbit/s signal by means of four- wave mixing in a slot-waveguide that has been filled with a highly nonlinear � ð3Þ-organic material. The second device is a 100 Gbit/s/1 V electrooptic modulator based on a slow-light SOI photonic crystal covered with a � ð2Þ-nonlinear organic material.
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ABSTRACT: Photonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1Ã¢Â€Â‰dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10Ã¢Â€Â‰GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5Ã¢Â€Â‰dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP ÃŽÂ¼sources and detector.Advances in Optical Technologies 01/2008; DOI:10.1155/2008/412518