A Photonic Interconnect Layer on CMOS
ABSTRACT We propose and demonstrate a photonic interconnect layer consisting of heterogeneous microdisk lasers and microdetectors integrated with a nanophotonic silicon waveguide circuit. The photonic layer is fabricated using waferscale processes and a die-to-wafer molecular bonding process.
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ABSTRACT: Photonics on CMOS is the integration of microelectronics technology and optics components to enable either improved functionality of the electronic circuit or miniaturization of optical functions. The integration of a photonic layer on an electronic circuit has been studied with three routes. For combined fabrication at the front end level, several building blocks using a silicon on insulator rib technology have been developed: slightly etched rib waveguide with low (0.1Ã¢Â€Â‰dB/cm) propagation loss, a high speed and high responsivity Ge integrated photodetector and a 10Ã¢Â€Â‰GHz Si modulators. Next, a wafer bonding of silicon rib and stripe technologies was achieved above the metallization layers of a CMOS wafer. Last, direct fabrication of a photonic layer at the back-end level was achieved using low-temperature processes with amorphous silicon waveguide (loss 5Ã¢Â€Â‰dB/cm), followed by the molecular bonding of InP dice and by the processing in microelectronics environment of InP ÃŽÂ¼sources and detector.Advances in Optical Technologies 01/2008;