A Photonic Interconnect Layer on CMOS
ABSTRACT We propose and demonstrate a photonic interconnect layer consisting of heterogeneous microdisk lasers and microdetectors integrated with a nanophotonic silicon waveguide circuit. The photonic layer is fabricated using waferscale processes and a die-to-wafer molecular bonding process.
Full-textDOI: · Available from: Pedro Rojo-Romeo, Sep 28, 2015
- SourceAvailable from: Yuqing Jiao
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- "However, due to the lack of on chip light generation and amplification the scalability of this approach to higher circuit complexities is limited. In  another approach is followed, depicted in Fig.1b, which relies on the evanescent coupling of light from a laser source processed in a III-V layer stack on top of the passive silicon circuit via a silicon waveguide to a III- V detector on top of the silicon circuit. However, the coupling efficiency of the optical tunnelling through the low-refractive-index layer between the laser and the SOI waveguides is becoming increasingly more difficult to control if the lasers get smaller. "
ABSTRACT: A new photonic integration technique is presented, based on the use of an indium phosphide membrane on top of a silicon chip. This can provide electronic chips (CMOS) with an added optical layer (IMOS) for resolving the communication bottleneck. A major advantage of InP is the possibility to integrate passive and active components (SOAs, lasers) in a single membrane. In this paper we describe progress achieved in both the passive and active components. For the passive part of the circuit we succeeded to bring the propagation loss of our circuits close to the values obtained with silicon; we achieved propagation loss as low as 3.3 dB/cm through optimization of the lithography and the introduction of C60 (fullerene) in an electro resist. Further we report the smallest polarisation converter reported for membrane waveguides ( <10 μm) with low-loss (< 1 dB from 1520- 1550 nm), > 95% polarisation conversion efficiency over the whole C-band and tolerant fabrication. We also demonstrate an InP-membrane wavelength demultiplexer with a loss of 2.8 dB, a crosstalk level of better than 18 dB and a uniformity over the 8 channels of better than 1.2 dB. For the integration of active components we are testing a twin guide integration scheme. We present our design based on optical and electrical simulations and the fabrication techniques.Proceedings of SPIE - The International Society for Optical Engineering 02/2014; DOI:10.1117/12.2045889 · 0.20 Impact Factor
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- "The detector structure is built as an InGaAs absorption layer sandwiched between a highly p-doped InGaAs contact layer and a highly n-doped InP layer, which is also used for realizing the membrane waveguide, and has a footprint of 5 × 10 µm 2 . We chose a total detector thickness of 1 µm in order to ease integration with the µ-disk lasers described in  "
ABSTRACT: We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the; 12/2008
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ABSTRACT: A cost-effective route to build electrically as well as optically controlled modulators in silicon photonics is reviewed. The technology enables modulation at bit rates beyond 100 Gbit/s. This platform relies on the well-established silicon-based complementary metal-oxide-semiconductor processing technology for fabricating silicon-on-insulator (SOI) waveguides, while an organic cladding layer adds the required nonlinearity. The strength of this hybrid technology is discussed, and two key devices in communications are exemplarily regarded in more detail. The first device demon- strates demultiplexing of a 120 Gbit/s signal by means of four- wave mixing in a slot-waveguide that has been filled with a highly nonlinear � ð3Þ-organic material. The second device is a 100 Gbit/s/1 V electrooptic modulator based on a slow-light SOI photonic crystal covered with a � ð2Þ-nonlinear organic material.