Article

The Use of Electron-Beam Lithography for Localized Micro-Beam Irradiations

Univ. Montpellier 2, Montpellier, France
IEEE Transactions on Nuclear Science (impact factor: 1.45). 07/2011; DOI:10.1109/TNS.2011.2128885
Source: IEEE Xplore

ABSTRACT A controlled microbeam facility based on electron-beam lithography is demonstrated as a means of observing total dose induced compensation effects on circuit parameters and understanding degradation mechanisms. The system uses electron-beam lithography techniques to perform on-chip microbeam irradiations on individual transistors or sub-circuits without any irradiation of the neighboring transistors. An experimental validation of the mechanisms proposed to explain the sensitivity of the input current of the LM139 as an illustration of this technique is provided.

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Keywords

controlled microbeam facility
 
electron-beam lithography
 
electron-beam lithography techniques
 
input current
 
irradiation
 
on-chip microbeam irradiations
 
total dose induced compensation effects