Conference Proceeding

Quantitative model for TMR and spin-transfer torque in MTJ devices

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International 01/2011; DOI:10.1109/IEDM.2010.5703417 pp.22.8.1 - 22.8.4 In proceeding of: Electron Devices Meeting (IEDM), 2010 IEEE International
Source: IEEE Xplore

ABSTRACT We present a Non-Equilibrium Green's Function (NEGF)-based model for spin torque transfer (STT) devices which provides qualitative as well as quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque (τ) and (4) out-of-plane torque (τ) over a range of bias voltages, using a single set of three adjustable parameters. We believe our model is able to cover this diverse range of experiments.

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    Article: Voltage Asymmetry of Spin-Transfer Torques
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    ABSTRACT: We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque and (4) out-of-plane torque over a range of bias voltages, using a single set of three adjustable parameters. We believe this is the first theoretical model that is able to cover this diverse range of experiments and a key aspect of our model is the inclusion of multiple transverse modes. We also provide a simple explanation for the asymmetric bias dependence of the in-plane torque, based on the polarization of the two contacts in energy range of transport.
    10/2009;