Conference Proceeding
Quantitative model for TMR and spin-transfer torque in MTJ devices
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
01/2011;
DOI:10.1109/IEDM.2010.5703417
pp.22.8.1 - 22.8.4 In proceeding of: Electron Devices Meeting (IEDM), 2010 IEEE International
Source: IEEE Xplore
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Article: Voltage Asymmetry of Spin-Transfer Torques
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ABSTRACT: We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane torque and (4) out-of-plane torque over a range of bias voltages, using a single set of three adjustable parameters. We believe this is the first theoretical model that is able to cover this diverse range of experiments and a key aspect of our model is the inclusion of multiple transverse modes. We also provide a simple explanation for the asymmetric bias dependence of the in-plane torque, based on the polarization of the two contacts in energy range of transport.10/2009;
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Keywords
bias voltages
NEGF)-based model
Non-Equilibrium Green's Function
provides qualitative
quantitative agreement
torque transfer