Article

Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122, USA
Applied Physics Letters (impact factor: 3.84). 02/2011; DOI:10.1063/1.3540688 pp.021110 - 021110-3
Source: IEEE Xplore

ABSTRACT Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density (∼108 cm -2) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of ∼120 kW / cm 2 and the spontaneous emission factor β is estimated to be 0.08.

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Keywords

Catalyst-free nanowires
 
nanowires
 
Optically
 
plasma-assisted molecular beam epitaxy
 
resolution transmission electron microscopy images
 
room temperature
 
single nanowire laser fabricated
 
spontaneous emission factor β
 
two-dimensional photonic crystal microcavity
 
wurtzite structure
 

Junseok Heo