Conference Proceeding

Design and evaluation of SOI devices for radiation environments

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
11/2010; DOI:10.1109/SOI.2010.5641470 pp.1 - 4 In proceeding of: SOI Conference (SOI), 2010 IEEE International
Source: IEEE Xplore

ABSTRACT SOI technologies offer key advantages for use in radiation environments, primarily related to reduced susceptibility to single-event effects. Because of charge trapping in the BOX, however, SOI technologies with light body doping (such as some fully depleted technologies) may be more sensitive to TID than similar bulk technologies. For sub 100-nm technologies, the advantages of SOI technologies related to SEE are less clear than they were in previous earlier technology generations because the critical charge required to upset the circuits is so low. The probability for upset (cross section), however, is lower for SOI circuits because charge collection does not occur over long distances, as it does in bulk technologies. This also reduces the likelihood that a single particle will affect multiple circuits in an IC.

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Keywords

bulk technologies
 
charge collection
 
charge trapping
 
circuits
 
critical charge
 
depleted technologies
 
distances
 
IC
 
light body
 
low
 
lower
 
multiple circuits
 
radiation environments
 
similar bulk technologies
 
single particle
 
single-event effects
 
SOI circuits
 
SOI technologies
 
SOI technologies offer key advantages
 
sub 100-nm technologies