Article

Charge transport in nanocrystal wires created by direct electron beam writing

Nanoscale Phys. Res. Lab., Univ. of Birmingham, Birmingham, UK
Micro & Nano Letters (impact factor: 0.94). 11/2010; DOI:10.1049/mnl.2010.0048 pp.274 - 277
Source: IEEE Xplore

ABSTRACT The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 105-108 . Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.

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Keywords

activated conduction
 
alkyl thiol tunnel barriers
 
authors report
 
Charge transport measurements yield room temperature resistances
 
direct electron beam
 
electron beam
 
granular metallic islands
 
local manipulation
 
low resistance
 
passivated gold nanocrystals
 
promising method
 
quasi-localised behaviour