Article

BJT-Mode Endurance on a 1T-RAM Bulk FinFET Device

IMEC, Leuven, Belgium
IEEE Electron Device Letters (Impact Factor: 3.02). 01/2011; 31(12):1380 - 1382. DOI: 10.1109/LED.2010.2079313
Source: IEEE Xplore

ABSTRACT In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode programming. The dominant degradation is due to the interface state generation by impact ionization used to write “1.” This degradation leads to the gate-induced drain leakage current increase, which results in shifts of the read state “0” current.

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