Conference Paper

Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm

DOI: 10.1109/VLSIT.2010.5556224 Conference: VLSI Technology (VLSIT), 2010 Symposium on
Source: IEEE Xplore

ABSTRACT Although single dopant signatures have been observed at low temperature [1-2], the impact on transistor performance of a single dopant atom at room temperature is not yet well understood. Here, for the first time, we provide an in-depth understanding of single dopant influence on NMOSFETs characteristics by linking low and room temperature transport. We demonstrate that, for gate length of 30 nm and below (channel length down to 10 nm), the presence of a single dopant dramatically alters the subthreshold behaviour when the dopant is located in the middle of the channel. Moving the dopants away from the channel leads to enhanced variability above the threshold voltage Vt.

0 Bookmarks
 · 
111 Views
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: We have carried out 3D Non-Equilibrium Green Function simulations of a junctionless gate-all-around n-type silicon nanowire transistor of 4.2 × 4.2 nm<sup>2</sup> cross-section. We model the dopants in a fully atomistic way. The dopant distributions are randomly generated following an average doping concentration of 10<sup>20</sup> cm<sup>-3</sup>. Elastic and inelastic Phonon scattering is considered in our simulation. Considering the dopants in a discrete way is the first step in the simulation of random dopant variability in junctionless transistors in a fully quantum mechanical way. Our results show that, for devices with an “unlucky” dopant configuration, with a starvation of donors under the gate, the threshold voltage can increase by a few hundred mV relative to devices with a more homogeneous distribution of dopants.
    Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on; 04/2011