Conference Proceeding

Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm

07/2010; DOI:10.1109/VLSIT.2010.5556224 pp.193 - 194 In proceeding of: VLSI Technology (VLSIT), 2010 Symposium on
Source: IEEE Xplore

ABSTRACT Although single dopant signatures have been observed at low temperature [1-2], the impact on transistor performance of a single dopant atom at room temperature is not yet well understood. Here, for the first time, we provide an in-depth understanding of single dopant influence on NMOSFETs characteristics by linking low and room temperature transport. We demonstrate that, for gate length of 30 nm and below (channel length down to 10 nm), the presence of a single dopant dramatically alters the subthreshold behaviour when the dopant is located in the middle of the channel. Moving the dopants away from the channel leads to enhanced variability above the threshold voltage Vt.

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Keywords

channel length
 
dopant
 
dopants
 
gate length
 
low
 
low temperature [1-2]
 
NMOSFETs characteristics
 
room temperature transport
 
single dopant
 
single dopant atom
 
single dopant influence
 
single dopant signatures
 
threshold voltage V<sub>t</sub>
 
variability