Conference Paper

BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

Analog Foundry Bus. Unit, Dongbu HiTek, Bucheon, South Korea
Conference: Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Source: IEEE Xplore

ABSTRACT 0.18μm BCD technology with the best-in-class nLDMOS is presented. The drift of nLDMOS is optimized to ensure lowest Rsp by using multi-implants and appropriate thermal recipe. The optimized 24V nLDMOS has BVDSS=36V and Rsp=14.5 mΩ-mm2. Electrical SOA and long-term hot electron (HE) SOA are also evaluated. The maximum operating voltage less than 10% degradation of on-resistance is 24.4V.

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