Conference Proceeding

Enhanced RF to DC CMOS rectifier with capacitor-bootstrapped transistor

Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
07/2010; DOI:10.1109/ISCAS.2010.5537481 In proceeding of: Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
Source: IEEE Xplore

ABSTRACT This paper presents a high efficient multi-stages full-wave RF to DC rectifier for RFID applications. The proposed converter employs diode-connected transistors with gate to drain bootstrapping capacitor to overcome threshold drop of voltage. Rectifying transistors are biased in triode region to improve the driving capability of the circuit while they operate at lower input voltages. Bulk biasing technique is applied to ensure faster turn on for level shifting transistors. Simulation results in 90nm CMOS technology at frequency of 920MHz, show that output voltage and power conversion efficiency at low input power level are improved compare to conventional rectifier using diode-connected transistors.

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Keywords

90nm CMOS technology
 
bootstrapping capacitor
 
Bulk biasing technique
 
diode-connected transistors
 
efficient multi-stages full-wave RF
 
lower input voltages
 
proposed converter
 
Rectifying transistors
 
RFID applications
 
Simulation results
 
threshold drop
 
transistors