Impact of applied strain on the electron transport through ferroelectric tunnel junctions

State and Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, and School of Physics and Engineering, Sun Yat-sen University, 510275 Guangzhou, People's Republic of China
Applied Physics Letters (Impact Factor: 3.3). 08/2010; 97(1):012905 - 012905-3. DOI: 10.1063/1.3462070
Source: IEEE Xplore


Combining nonequilibrium Green’s functions with density-functional theory, we have investigated the effect of external strain field on the tunneling electroresistance (TER) of ferroelectric material sandwiched between Pt electrodes. The results show that the strain induced para/ferroelectric phase transitions play an important role in the electronic transport properties of the junction. Sizable enhancements in the resistance are found for the strained ferroelectric junctions with a TER ratio of 9000%. Detail analyses show that the Ti–O displacements along the transport direction in ferroelectric barrier change the effective potential profile, resulting in a giant piezoelectric resistance in the ferroelectric tunnel junctions.


Available from: Xin Luo, Dec 20, 2014
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